6-422 cascadable silicon bipolar mmic amplifier technical data features ? usable gain to 6.0 ghz ? high gain: 32.5 db typical at 0.1 ghz 22.5 db typical at 1.0 ghz ? low noise figure: 3.3 db typical at 1.0 ghz ? low cost plastic package msa-0885 85 plastic package description the msa-0885 is a high perfor- mance silicon bipolar monolithic microwave integrated circuit (mmic) housed in a low cost plastic package. this mmic is designed for use as a general typical biasing configuration c block c block r bias v cc > 10 v v d = 7.8 v rfc (optional) in out msa 4 1 2 3 purpose 50 w gain block above 0.5 ghz and can be used as a high gain transistor below this fre- quency. typical applications include narrow and moderate band if and rf amplifiers in commer- cial and industrial applications. the msa-series is fabricated using hps 10 ghz f t , 25 ghz f max , silicon bipolar mmic process which uses nitride self-alignment, ion implantation, and gold metalli- zation to achieve excellent perfor- mance, uniformity and reliability. the use of an external bias resistor for temperature and current stability also allows bias flexibility. 5965-9545e
6-423 msa-0885 absolute maximum ratings parameter absolute maximum [1] device current 65 ma power dissipation [2,3] 500 mw rf input power +13 dbm junction temperature 150 c storage temperature C65 c to 150 c thermal resistance [2,4] : q jc = 130 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case = 25 c. 3. derate at 7.7 mw/ c for t c > 85 c. 4. see measurements section thermal resistance for more information. g p power gain (|s 21 | 2 ) f = 0.1 ghz db 32.5 f = 1.0 ghz 21.0 22.5 input vswr f = 0.1 to 3.0 ghz 1.9:1 output vswr f = 0.1 to 3.0 ghz 1.6:1 nf 50 w noise figure f = 1.0 ghz db 3.3 p 1 db output power at 1 db gain compression f = 1.0 ghz dbm 12.5 ip 3 third order intercept point f = 1.0 ghz dbm 27.0 t d group delay f = 1.0 ghz psec 125 v d device voltage v 6.2 7.8 9.4 dv/dt device voltage temperature coefficient mv/ c C17.0 note: 1. the recommended operating current range for this device is 20 to 40 ma. typical performance as a function of current is on the following page. electrical specifications [1] , t a = 25 c symbol parameters and test conditions: i d = 36 ma, z o = 50 w units min. typ. max. vswr
6-424 msa-0885 typical scattering parameters [1] (z o = 50 w , t a = 25 c, i d = 36 ma) freq. ghz mag ang db mag ang db mag ang mag ang k 0.1 .64 C21 32.5 42.29 160 C36.5 .015 40 .61 C24 0.78 0.2 .58 C39 31.3 36.89 144 C32.8 .023 50 .54 C45 0.67 0.4 .44 C65 28.7 27.20 120 C29.4 .034 54 .42 C77 0.69 0.6 .36 C82 26.3 20.57 106 C27.2 .044 53 .33 C98 0.77 0.8 .31 C95 24.3 16.31 96 C25.2 .055 53 .28 C115 0.83 1.0 .27 C105 22.5 13.36 87 C24.2 .061 51 .25 C129 0.87 1.5 .24 C125 19.3 9.24 71 C21.4 .085 50 .18 C153 0.96 2.0 .26 C147 16.7 6.82 56 C19.7 .103 47 .15 C173 0.98 2.5 .29 C159 14.9 5.57 48 C18.4 .120 44 .12 180 1.00 3.0 .34 C175 13.1 4.51 37 C17.7 .130 42 .09 165 1.03 3.5 .38 172 11.6 3.80 25 C16.9 .144 37 .06 172 1.04 4.0 .42 161 10.1 3.21 14 C16.3 .153 33 .04 C139 1.06 5.0 .48 135 7.7 2.43 C7 C15.6 .167 24 .09 C90 1.09 6.0 .60 102 5.5 1.88 C29 C14.9 .179 17 .08 C140 1.06 note: 1. a model for this device is available in the device models section. s 11 s 21 s 12 s 22 typical performance, t a = 25 c (unless otherwise noted) g p (db) 0.1 0.3 0.5 1.0 3.0 6.0 frequency (ghz) figure 1. typical power gain vs. frequency, i d = 36 ma. 2 046810 v d (v) figure 2. device current vs. voltage. 0 5 10 15 20 25 30 35 0 10 20 30 40 gain flat to dc i d (ma) t c = +85 c t c = +25 c t c = ?5 c figure 3. power gain vs. current. figure 4. output power at 1 db gain compression, nf and power gain vs. case temperature, f = 1.0 ghz, i d =36ma. frequency (ghz) figure 5. output power at 1 db gain compression vs. frequency. frequency (ghz) figure 6. noise figure vs. frequency. i d (ma) 5 10 15 20 25 30 35 g p (db) 10 30 40 20 0.1 ghz 4.0 ghz 2.0 ghz 0.5 ghz 1.0 ghz 3.0 2.5 3.5 4.0 4.5 nf (db) 0.1 0.2 0.3 0.5 2.0 1.0 4.0 0.1 0.2 0.3 0.5 2.0 1.0 4 6 8 10 16 14 12 p 1 db (dbm) i d = 36 ma i d = 40 ma i d = 20 ma 2 3 4 11 12 13 21 22 23 ?5 +25 0 +55 +85 p 1 db (dbm) nf (db) gp (db) temperature ( c) nf p 1 db g p i d = 20 ma i d = 36 ma i d = 40 ma
6-425 85 plastic package dimensions 1 3 4 2 5 typ. 45 ground ground rf output and bias rf input .085 2.15 .286 .030 7.36 .76 notes: (unless otherwise specified) 1. dimensions are in 2. tolerances in .xxx = 0.005 mm .xx = 0.13 mm .020 .51 .07 0.43 .060 .010 1.52 .25 .006 .002 .15 .05 0.143 0.015 3.63 0.38 a08
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